? semiconductor components industries, llc, 2004 december, 2004 ? rev. 5 1 publication order number: mr750/d mr750 series mr754 and mr760 are preferred devices high current lead mounted rectifiers features ? current capacity comparable to chassis mounted rectifiers ? very high surge capacity ? insulated case ? pb?free packages are available* mechanical characteristics: ? case: epoxy, molded ? weight: 2.5 grams (approximately) ? finish: all external surfaces corrosion resistant and terminal lead is readily solderable ? lead temperature for soldering purposes: 260 c max. for 10 seconds ? polarity: cathode polarity band ? shipped 1000 units per plastic bag. available tape and reeled, 800 units per reel by adding a arl'' suffix to the part number *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. axial lead button case 194 style 1 high current lead mounted silicon rectifiers 50 ? 1000 volts diffused junction preferred devices are recommended choices for future use and best overall value. marking diagram mr7xx ayyww mr7 = device code xx = 50, 51, 52, 54, 56 or 60 a = location code yy = year ww = work week see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ordering information http://onsemi.com
mr750 series http://onsemi.com 2 maximum ratings characteristic symbol mr750 mr751 mr752 mr754 mr756 mr760 unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 50 100 200 400 600 1000 v non?repetitive peak reverse voltage (halfwave, single phase, 60 hz peak) v rsm 60 120 240 480 720 1200 v rms reverse voltage v r(rms) 35 70 140 280 420 700 v average rectified forward current (single phase, resistive load, 60 hz) see figures 5 and 6 i o 22 (t l = 60 c, 1/8 in lead lengths) 6.0 (t a = 60 c, p.c. board mounting) a non?repetitive peak surge current (surge applied at rated load conditions) i fsm 400 (for 1 cycle) a operating and storage junction temperature range t j , t stg 65 to +175 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual str ess limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation i s not implied, damage may occur and reliability may be affected. electrical characteristics characteristic and conditions symbol max unit maximum instantaneous forward voltage drop (i f = 100 amps, t j = 25 c) v f 1.25 v maximum forward voltage drop (i f = 6.0 amps, t a = 25 c, 3/8 in leads) v f 0.90 v maximum reverse current t j = 25 c (rated dc voltage) t j = 100 c i r 25 1.0 a ma ordering information device package shipping 2 mr750 axial lead 1000 units / bag MR750RL axial lead 800 / tape & reel mr751 axial lead 1000 units / bag mr751g axial lead (pb?free) 1000 units / bag mr751rl axial lead 800 / tape & reel mr751rlg axial lead (pb?free) 800 / tape & reel mr752 axial lead 1000 units / bag mr752g axial lead (pb?free) 1000 units / bag mr752rl axial lead 800 / tape & reel mr752rlg axial lead (pb?free) 800 / tape & reel mr754 axial lead 1000 units / bag mr754rl axial lead 800 / tape & reel mr756 axial lead 1000 units / bag mr756rl axial lead 800 / tape & reel mr756rlg axial lead (pb?free) 800 / tape & reel mr760 axial lead 1000 units / bag mr760rl axial lead 800 / tape & reel 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
mr750 series http://onsemi.com 3 figure 1. forward voltage figure 2. maximum surge capability figure 3. forward voltage temperature coefficient figure 4. typical transient thermal resistance 1.8 2.4 0.6 v f , instantaneous forward voltage (volts) 700 500 20 50 10 i f , instantaneous forward current (amp) 5.0 2.0 1.0 1.2 0.8 1.0 1.4 1.6 2.0 2.2 2.6 7.0 100 70 0.2 0.5 0.7 200 30 3.0 0.3 300 maximum typical t j = 25 c number of cycles at 60 hz 100 1.0 300 100 80 60 i 2.0 5.0 10 20 50 200 400 600 , peak half wave current (amp) fsm t j = 175 c 25 c v rrm may be applied between each cycle of surge. the t j noted is t j prior to surge i f , instantaneous forward current (amp) 1.0 0.2 +0.5 0 -0.5 -1.0 -1.5 -2.0 2.0 coefficient (mv/ c) 10 20 100 200 0.5 5.0 50 typical range t, time (seconds) 1.0 10 1.0 0.2 2.0 5.0 10 20 50 5.0 20 r 3.0 2.0 0.5 0.3 0.1 0.2 0.3 0.5 0.7 3.0 30 7.0 70 both leads to heat sink, with lengths as shown. variations in r jl(t) below 2.0 seconds are independent of lead connections of 1/8 inch or greater, and vary only about 20% from the values shown. val- ues for times greater than 2.0 seconds may be obtained by drawing a curve, with the end point (at 70 seconds) taken from figure 8, or calculated from the notes, using the given curves as a guide. either typical or maximum values may be used. for r jl(t) values at pulse widths less than 0.1 second, the above curve can be extrapolated down to 10 s at a continuing slope. thermal resistance ( c/w) 175 c 25 c 1/2" 3/8" 1/4" 1/8" , junction-to-lead transient jl(t) q heat sink l l
mr750 series http://onsemi.com 4 figure 5. maximum current ratings t l , lead temperature ( c) 0 8.0 i f(av) 0 12 20 28 40 80 120 160 200 figure 6. maximum current ratings 0 8.0 4.0 0 16 24 32 i f(av) , average forward current (amps) p f(av) figure 7. power dissipation , power dissipation (watts) 5/8" , average forward current (amps) capacitance loads 8.0 12 16 resistive inductive loads t a , ambient temperature ( c) 0 1.0 i f(av) 0 2.0 3.0 4.0 40 80 120 160 200 figure 8. steady state thermal resistance f = 60 hz , average forward current (amps) resistive inductive loads capacitance loads - 1 & 3 20 6 1 & 3 20 i avg t a(a) t a(k) t l(a) t c(a) t j t c(k) t l(k) p f r s(a) r l(a) r j(a) r j(k) r l(k) r s(k) use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. lowest values occur when one side of the rectifier is brought as close as possible to the heat sink as shown below. terms in the model signify: t a = ambient temperature t c = case temperature t l = lead temperature t j = junction temperature r s = thermal resistance, heat sink to ambient r l = thermal resistance, lead to heat sink r j = thermal resistance, junction to case p f = power dissipation (subscripts a and k refer to anode and cathode sides, respectively.) values for thermal resistance components are: r l = 40 c/w/in. typically and 44 c/w/in maximum. r j = 2 c/w typically and 4 c/w maximum. since r j is so low, measurements of the case temperature, t c , will be approximately equal to junction temperature in practical lead mounted applications. when used as a 60 hz rectifierm the slow thermal response holds t j(pk) close to t j(avg) . therefore maximum lead temperature may be found from: t l = 175 -r jl p f . p f may be found from figure 7. the recommended method of mounting to a p.c. board is shown on the sketch, where r ja is approximately 25 c/w for a 1-1/2" x 1-1/2" copper surface area. values of 40 c/w are typical for mounting to terminal strips or p.c. boards where available surface area is small. board ground plane recommended mounting for half wave circuit 24 28 32 0 1/4 5.0 0 1/2 3/4 1.0 l, lead length (inches) r jl , thermal resistance, single lead to heat sink, insignificant heat flow through other lead 10 15 20 25 30 35 40 24 16 4.0 20 60 100 140 180 4.0 12 20 28 1/8 3/8 5/8 7/8 q junction-to-lead( c/w) both leads to heat sink with lengths as shown 3/8" 1/4" l = 1/8" 20 60 100 140 180 5.0 6.0 7.0 i (pk) = 5 i avg i (pk) = 10 i avg i (pk) = 20 i avg 10 i avg i (pk) = 5 i avg resistive - inductive loads both leads to heat sink, equal length 6 (i pk /i ave = 6.28) see note r ja = 40 c/w see note r ja = 25 c/w notes thermal circuit model (for heat conduction through the leads)
mr750 series http://onsemi.com 5 figure 9. rectification efficiency figure 10. reverse recovery time repetition frequency (khz) 2.0 1.0 100 50 30 20 70 3.0 5.0 100 relative efficiency (%) 70 7.0 10 20 30 50 t j = 25 c current input waveform i r /i f , ratio of reverse to forward current 0.2 0.1 20 7.0 5.0 2.0 1.0 7.0 0.3 0.5 10 3.0 t rr , reverse recovery time ( s) 10 0.7 1.0 2.0 3.0 5.0 t j = 25 c i f = 5 a 3 a 1 a i f 0 i r t rr figure 11. junction capacitance figure 12. forward recovery time v r , reverse voltage (volts) 1.0 3.0 500 300 200 100 70 50 2.0 c, capacitance (pf) 10 20 100 7.0 5.0 50 30 t j = 25 c 1.0 i f , forward pulse current (amp) 0.7 0.5 0.3 0.2 0.1 2.0 , forward recovery time ( s) t fr 5.0 3.0 1.0 7.0 10 fr = 1.0 v t j = 25 c fr f t fr t j = 175 c 30 700 1000 30 20 10 70 fr = 2.0 v r s r l v o figure 13. single?phase half?wave rectifier circuit the rectification efficiency factor s shown in figure 9 was calculated using the formula: s p (dc) p (rms) v 2 o (dc) r l v 2 o (rms) r l . 100% v 2 o (dc) v 2 o ( ac) v 2 o (dc) . 100% (1) for a sine wave input v m sin (wt) to the diode, assumed lossless, the maximum theoretical efficiency factor becomes: s (sine) v 2 m 2 r l v 2 m 4r l . 100% 4 p 2 . 100% 40.6% (2) for a square wave input of amplitude v m , the efficiency factor becomes: s (square) v 2 m 2 r l v 2 m r l . 100% 50% (3) (a full wave circuit has twice these efficiencies) as the frequency of the input signal is increased, the reverse recovery time of the diode (figure 10) becomes significant, resulting in an increasing ac voltage component across r l which is opposite in polarity to the forward current, thereby reducing the value of the ef ficiency factor s , as shown on figure 9. it should be emphasized that figure 9 shows waveform efficiency only; it does not provide a measure of diode losses. data was obtained by measuring the ac component of v o with a true rms ac voltmeter and the dc component with a dc voltmeter. the data was used in equation 1 to obtain points for figure 9.
mr750 series http://onsemi.com 6 package dimensions axial lead button case 194?04 issue h notes: 1. cathode symbol on package. 2. 194?01 obsolete, 194?04 new standard. style 1: pin 1. cathode 2. anode a k b k 2 1 d dim min max min max inches millimeters a 8.43 8.69 0.332 0.342 b 5.94 6.25 0.234 0.246 d 1.27 1.35 0.050 0.053 k 25.15 25.65 0.990 1.010 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 mr750/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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